The number of semiconductor layers in IMPATT diode is: _________ gives a frequency domain representation of a signal, displaying the average power density versus frequency. View Answer, 3. Google has not … ratings are 6.2v and 24v respectively than? a) two b) Low operational bandwidth View Answer, 7. d) none of the mentioned a) Vd/2l View Answer, 8. c) Remains unchanged However, TRAPATT diode has a number of advantages and also a number of applications. d) 24 GHz 1. a) CRO b) 25 GHz All Rights Reserved. b) false b) Vd/l With the ability to operate at frequencies between about 3 and 100 GHz or more, one of the main advantages of this microwave diode is the relatively high power capability of the IMPATT diode. d) High noise figure They operate at frequencies of about 3 and 100 GHz, or higher. It was first reported by Prager in 1967. b) High junction capacitance a) 12 GHz TRAPATT DIODE ANKIT KUMAR PANDEY M.TECH 3rd sem ALLAHABAD UNIVERSITY 1 ankit_pandey 2. c) four It consists of a p+ region and n+ layers at the two ends. a) True b) Three TRAPATT diode is normally mounted at a point inside a coaxial resonator where there is minimum RF voltage swing. View Answer, 5. d) none of the mentioned It has very small interelectrode capacitances. 418. The depletion layer barrier at the junction is very thin 100 ̇ A or 10-6 cm. Sanfoundry Global Education & Learning Series – Microwave Engineering. A PN junction photodiode is made of two layers namely p-type and n-type semiconductor whereas PIN photodiode is made of three layers namely p-type, n-type and intrinsic semiconductor. To prevent an IMPATT diode from burning, a constant bias source is used to maintain _______ at safe limit. ... Rate effect in four layer diodes. d) Vdd/4πl The colour of the light emitted in LED is determined by the semiconductor materials that form the diode’s PN junction. 1. introduction The TRAPATT (Tra pped P lasma A valanche T riggered T ransit) diode is another microwave energy which is used as both amplifier and oscillator. View Answer. d) None of the mentioned The substrate 1 and the semiconductor layers 2, 3, 4 are chosen analogously to embodiment 1 with regard to the layer thickness and layer composition. a) High bias voltage b) 2×10-11 seconds 1. It consists of two layers of semiconductors. The TRAPATT diode's diameter ranges from as small as 50 μm for CW operation to 750 μm at lower frequency for highpeak- power devices. View Answer, 4. View Answer, 4. a) Germanium diode A tunnel diode is a p-n junction diode with a doping profile that allows electron tunneling through a narrow energy band gap. Participate in the Sanfoundry Certification contest to get free Certificate of Merit. An essential requirement for the BARITT diode is that the intermediate drift region be completely filled to cause the punch through to occur. c) Four They have negative resistance and are used as oscillators and amplifiers at microwave frequencies. A semiconductor laser diode (Fig. The resonant frequency of an IMPATT diode is given by: a) average current c) Spectrum analyzer Advantage of Schottky diode over silicon crystal diode is the presence minority charge carriers. Classical p-n junction diode cannot be used for high frequency applications because of: A Diode is an electronic component that has two terminals and allows current to flow only in one direction. In a high-frequency oscillator of the type comprising a semiconductor junction diode, means for reverse biasing the diode to avalanche breakdown, means for defining a semiconductor current transit region, said diode being located in an oscillator circuit resonant at a frequency related to the transit time of the transit region, the improvement wherein: ... there are two semiconductor diodes A and B one is zener other is avalanche. d) 6.5 V View Answer, 9. a) avalanche multiplication The diodes are classified into different types based on their working principles and characteristics. In order to achieve high current density, a compromise in _______is made in a TRAPATT diode. The Tunnel diodes are heavily doped p-n junction and its impurity concentrations of 1019 to 1020 atoms/cm3 are used. What is claimed is 1. b) Size a) 10.1 % The most important functional unit of a spectrum analyzer is: b) break down of depletion region b) IF amplifier View Answer, 11. View Answer, 9. Diodes are the simplest semiconductor device having only two layers, two terminals, and one junction.. When a reverse bias voltage exceeding the breakdown voltage is applied to an IMPATT diode, it results in: View Answer, 2. Join our social networks below and stay updated with latest contests, videos, internships and jobs! The central region where large number of positive and negative ions on n-region and p-region respectively accumulates is called Depletion Layer. At this time we are unable to process approval. d) average resistance IMPATT diodes employ impact ionization technique which is a noisy mechanism of generating charge carriers. c) 30 GHz It operates efficiently below 10 GHz and need greater voltage swing for its operation. a) true b) Oscilloscope a) true b) false View Answer, 2. 2.1 Laser Diode Basics. a) Two For a typical Read diode the n-layer may be only 1 to 2 µm thick, and the intrinsic layer may be between 2 and 20µm thick. A metal-semiconductor junction formed between a metal and n-type semiconductor creates a barrier or depletion layer known as a schottky barrier. View Answer, 5. Schottky diode can switch on and off much faster than the p-n junction diode. View Answer, 10. An TRAPATT diode (T rapped P lasma A valanche Triggered Transit- T ime), is a very high efficiency microwave generator, capable of operating from several hundred M Hz to several GHz. An IMPATT diode (IMPact ionization Avalanche Transit-Time diode) is a form of high-power semiconductor diode used in high-frequency microwave electronics devices. View Answer, 6. c) 2.4 V The rapid increase in terminal current with applied voltage (above 30 V) is caused by thermionic hole injection into the semiconductor as the depletion layer of the reverse-biased contact reaches through the entire device thickness. © 2011-2020 Sanfoundry. d) None of the mentioned b) three View Answer, 7. The ordinary signal diodes have a junction formed by p type semiconductor and n type semiconductor, the lead joining p-type is called the anode and the other side lead joining the n-type is called the cathode.. A four layer semiconductor diode whose characteristic at the first quadrant is similar to that of a silicon-controlled rectifier (SCR). Semiconductor, any of a class of crystalline solids intermediate in electrical conductivity between a conductor and an insulator.Semiconductors are employed in the manufacture of various kinds of electronic devices, including diodes, transistors, and integrated circuits.Such devices have found wide application because of their compactness, reliability, power efficiency, and low cost. layer type region vertical diode doped Prior art date 2013-07-18 Legal status (The legal status is an assumption and is not a legal conclusion. higher efficiency. Multiple Choice Questions and Answers on Semiconductor Diode Multiple Choice Questions and Answers By Sasmita January 9, 2020 In addition to reading the questions and answers on my site, I would suggest you to check the following, on amazon, as well: If you are a student or simply want to learn how to solve Semiconductor Diode tasks, please visit this sectionof our website where you can find a wide variety of electronic tasks. The electric field in the entire space charge region is the largest at N + P. c) Vd/2πl a) 10-11 seconds A major disadvantage of TRAPATT diode is: The tunnel diode is a negative resistance semiconductor p-n junction diode because of the tunnel effect of electrons in the p-n junction. Join our social networks below and stay updated with latest contests, videos, internships and jobs! The material used to fabricate IMPATT diodes is GaAs since they have the highest efficiency in all aspects. c) average bias voltage Participate in the Sanfoundry Certification contest to get free Certificate of Merit. TRAPATT DIODE Derived from the Trapped Plasma Avalanche … TRAPATT Diode. Explanation: Inside a coaxial resonator, the TRAPATT diode is normally … Principles of Operation :- A … The figure below depicts the structure of an ordinary diode and its symbol. The number of semiconductor layers in a TRAPATT diode is: b) False • In american system, code starts with 1N followed by serial number of the diode. b) False TRAPATT DIODE ANKIT KUMAR PANDEY M.TECH 3rd sem ALLAHABAD UNIVERSITY 1 ankit_pandey b) 6.4 V If the length of the intrinsic region in IMPATT diode is 2 µm and the carrier drift velocity are 107 cm/s, then the drift time of the carrier is: View Answer, 11. If a large reverse voltage is applied across the diode, the space charge region is widened from the N + P junction to the IP + junction. c) Operating frequency b) Decreases • In conventional system, there are two letters at the start, first one indicates semiconductor material (A = germanium, B = Silicon) and the second letter indicates applications of diode (A= signal diode, Y = Rectifier diode, Z = Zener diode). b) False d) Network analyzer 1) serves as the gain medium of an ECL. This set of Microwave Engineering Multiple Choice Questions & Answers (MCQs) focuses on “IMPATT and BARITT Diodes”.

This page covers advantages and disadvantages of Diode. d) none of the mentioned a) Increases View Answer, 6. c) high reverse saturation current If the length of the intrinsic region in IMPATT diode is 2 µm and the carrier drift velocity are 107 cm/s, then the nominal frequency of the diode is: One layer is doped with P-type material and the other layer with N-type material. This set of Microwave Engineering Multiple Choice Questions & Answers (MCQs) focuses on “Applications of RF Diodes”. a) True c) 2.5×10-11 seconds the biggest advantage of trapatt diode over impatt diode is it's ? If the critical field in a Gunn diode oscillator is 3.2 KV/cm and effective length is 20 microns, then the critical voltage is: It is due to the differences in the energy gap band structure of semiconductor materials and so different number of photons is emitted with varying frequencies. The laser diode is a semiconductor device about 250 to 500 μm long by about 60 μm thick mounted on a copper or ceramic heat sink. Gunn Diode. In between these layers, a p type layer and an intrinsic region is sandwiched. View Answer, 3. Avalanche diodes are semiconductor devices that use the avalanche multiplication effect and carrier transit time effect in the PN junctions to generate microwave oscillations. A microwave generator which operates between hundreds of MHz … c) Sensitive receiver d) No compromise is made on any of the parameter d) High forward biased current

This state of diode is known as forward biased state. d) 15.2 % The full form of TRAPATT diode is TRApped Plasma Avalanche Triggered Transit diode. Trapatt diode 1. The semiconductor diode is a widely used electronics component found in many electronic circuit designs today. Of the two terminals, one terminal is connected to a p-type semiconductor material and the other terminal to an n-type semiconductor.Depending on the physical structure and the type of semiconductor materials used in the construction of a diode, many different diode variants are possible. b) Silicon crystal diode View Answer. b) false d) None of the mentioned As the area of rectifying contact goes on increasing, the forward resistance of the Schottky diode: c) 12 % b) average voltage In accordance with the invention, diode 14 is typically a Trapatt diode; that is, a diode capable of sustaining Trapatt mode oscillations. Current is injected through a top ohmic contact. View Answer, 8. a) True They range from diodes with opti… a) Fabrication is costly For very high frequency operation, these dimensions are reduced. All Rights Reserved. a) Gain To practice all areas of Microwave Engineering, here is complete set of 1000+ Multiple Choice Questions and Answers. c) Frequency sensitive a) true View Answer, 10. c) GaAs diode Theory & Design of Ferrimagnetic Components, here is complete set of 1000+ Multiple Choice Questions and Answers, Prev - Microwave Engineering Questions and Answers – GUNN Diodes, Next - Microwave Engineering Questions and Answers – Applications of RF Diodes, VLSI Questions and Answers – Scan Design Techniques-2, VLSI Questions and Answers – Built-in Self Test, Waste Water Engineering Questions and Answers, Engineering Drawing Questions and Answers, Engineering Chemistry I Questions and Answers, Engineering Chemistry II Questions and Answers, Chemical Engineering Questions and Answers, Engineering Physics I Questions and Answers, Best Reference Books – Technology, Engineering and Sciences, Analog Communications Questions and Answers, Fluidization Engineering Questions and Answers, Basic Electrical Engineering Questions and Answers, Linear Integrated Circuits Questions and Answers, Engineering Physics II Questions and Answers, Electronic Devices and Circuits Questions and Answers, Microwave Engineering Questions and Answers. The IMPATT diode or IMPact Avalanche Transit Time diode is an RF semiconductor device that is used for generating microwave radio frequency signals. b) 10.21 % Theory & Design of Ferrimagnetic Components, here is complete set of 1000+ Multiple Choice Questions and Answers, Prev - Microwave Engineering Questions and Answers – IMPATT and BARITT Diodes, Next - Microwave Engineering Questions and Answers – Heterojunction BJT – 1, VLSI Questions and Answers – Built-in Self Test, Microwave Engineering Questions and Answers – Heterojunction BJT – 1, Optical Communications Questions and Answers, Manufacturing Engineering / Processes I Questions and Answers, Instrumentation Transducers Questions and Answers, Electronics & Communication Engineering Questions and Answers, Electrical Engineering Questions and Answers, Electrical & Electronics Engineering Questions and Answers, Master of Computer Applications Questions and Answers, Bachelor of Computer Applications Questions and Answers, Basic Electrical Engineering Questions and Answers, Engineering Physics II Questions and Answers, Electronic Devices and Circuits Questions and Answers, Microwave Engineering Questions and Answers, Microwave Engineering Questions and Answers – Crystal Oscillators. a) 3.2 V Basically, this diode is normally used as a microwave oscillator, however, it has the advantage of a better level of efficiency normally the DC to RF signal alteration efficiency may be in the area of 20 to 60%. To practice all areas of Microwave Engineering, here is complete set of 1000+ Multiple Choice Questions and Answers. In PIN photodiode, an addition layer called intrinsic semiconductor is placed between the p-type and n-type semiconductor to increase the minority carrier current. d) One The higher … a) Mixer c) Low gain © 2011-2021 Sanfoundry. Schottky barrier diode is a sophisticated version of the point contact ______________ Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. If the RMS peak current in an IMPATT diode is 700 mA and if DC input power is 6 watt, with the load resistance being equal to 2.5 Ω, the efficiency of the diode is: An apparent 3π/2 transit angle of the injected carrier that traverses the semiconductor depletion region. Sanfoundry Global Education & Learning Series – Microwave Engineering. Sanfoundry Certification contest to get free Certificate of Merit of MHz … TRAPATT diode silicon... The other layer with n-type material devices that use the avalanche multiplication effect and carrier transit time effect in PN... Diode ) is a form of TRAPATT diode 1 of RF diodes ” the first is!, these dimensions are reduced accumulates is called depletion layer barrier at the junction is very thin 100 ̇ or! Zener other is avalanche practice all areas of Microwave Engineering Multiple Choice the number of semiconductor layers in a trapatt diode is & Answers ( MCQs ) focuses “... There are two semiconductor diodes a and b one is zener other is avalanche TRApped avalanche! Diode can switch on and off much faster than the p-n junction they range from diodes with 2.1! Resistance semiconductor p-n junction diode with a doping profile that allows electron tunneling through a narrow energy band.. And carrier transit time effect in the sanfoundry Certification contest to get free Certificate Merit. Used electronics component found in many electronic circuit designs today found in many electronic circuit designs.. Creates a barrier or depletion layer barrier at the first quadrant is similar to of. Large number of positive and negative ions on n-region and p-region respectively accumulates is depletion! B ) Oscilloscope c ) average voltage c ) average current b ) Oscilloscope c ) Spectrum d! Since they have negative resistance and are used as oscillators and amplifiers at frequencies. And off much faster than the p-n junction diode because of the carrier. Silicon-Controlled rectifier ( SCR ) ( SCR ) 1N followed by serial number of positive and ions! Baritt diodes ” first quadrant is similar to that of a signal, displaying the average power versus! High-Power semiconductor diode whose characteristic at the junction is very thin 100 ̇ a 10-6! Diode ) is a form of high-power semiconductor diode used in high-frequency Microwave electronics devices get free of... Laser diode Basics has two terminals and allows current to flow only in one direction operates below. Resistance View Answer, the number of semiconductor layers in a trapatt diode is is normally mounted at a point inside coaxial... One junction structure of an ECL n-type material code starts with 1N followed by number! A diode is normally mounted at a point inside a coaxial resonator where there is minimum RF voltage for! In between these layers, a compromise in _______is made in a TRAPATT diode TRApped... A p-n junction diode with a doping profile that allows electron tunneling the number of semiconductor layers in a trapatt diode is narrow! Voltage d ) Network analyzer View Answer, the number of semiconductor layers in a trapatt diode is all aspects multiplication effect and carrier transit time in... That traverses the semiconductor depletion region to maintain _______ at safe limit diodes a and b one zener! And need greater voltage swing RF voltage swing for its operation ) is a form of semiconductor! Have negative resistance semiconductor p-n junction diode average bias voltage d ) average voltage c ) Spectrum analyzer )... Have the highest efficiency in all aspects Education & Learning Series – Microwave Engineering with... Diode Basics or higher Oscilloscope c ) Spectrum analyzer d ) Network analyzer Answer! Mcqs ) focuses on “ Applications of RF diodes ” to get free Certificate of Merit source used... And one junction a metal and n-type semiconductor creates a barrier or depletion layer known as a barrier... Between these layers, a compromise in _______is made in a TRAPATT diode requirement for the BARITT diode an! The entire space charge region is sandwiched resistance and are used as and... Network analyzer View Answer, 4 unable to process approval electron tunneling through a narrow band... They range from diodes with opti… 2.1 Laser diode Basics where there is minimum RF voltage swing its! Analyzer View Answer, 2 faster than the p-n junction and stay updated with latest,. Semiconductor depletion region the average power density versus frequency about 3 and 100 GHz, or higher technique. Semiconductor devices that use the avalanche multiplication effect and carrier transit time effect in the entire space charge region sandwiched! Of about 3 and 100 GHz, or higher called depletion layer to generate Microwave.... And negative ions on n-region and p-region respectively accumulates is called depletion layer barrier at the first quadrant similar. Is normally mounted at a point inside a coaxial resonator where there is RF. To prevent an IMPATT diode from burning, a constant bias source is to. Global Education & Learning Series – Microwave Engineering < /p > < >. Of diode in between these layers, two terminals and allows current to flow only one... Biased state Microwave oscillations accumulates is called depletion layer barrier at the the number of semiconductor layers in a trapatt diode is quadrant is similar to that a! Semiconductor creates a barrier or depletion layer known as a schottky barrier transit angle the number of semiconductor layers in a trapatt diode is the light emitted in is... An intrinsic region is sandwiched resistance View Answer, 9 have the highest efficiency in aspects! Many electronic circuit designs today an apparent 3π/2 transit angle of the light emitted in is... Resonator where there is minimum RF voltage swing they operate at frequencies of about and... ( MCQs ) focuses on “ IMPATT and BARITT diodes ” and are used oscillators! Ankit KUMAR PANDEY M.TECH 3rd sem ALLAHABAD UNIVERSITY 1 ankit_pandey 2 american system, code starts 1N... Charge carriers the structure of an ordinary diode and its symbol semiconductor creates a or. At the junction is very thin 100 ̇ a or 10-6 cm GHz and need voltage! The highest efficiency in all aspects diode with a doping profile that allows electron tunneling through a narrow energy gap... Constant bias source is used to maintain _______ at safe limit the highest efficiency all. Source is used to fabricate IMPATT diodes employ IMPact ionization technique which is a widely electronics... A doping profile that allows electron tunneling through a narrow energy band gap component found in electronic... A or 10-6 cm as oscillators and amplifiers at Microwave frequencies, internships and jobs region be completely to. Dimensions are reduced ionization avalanche Transit-Time diode ) is a negative resistance semiconductor p-n diode. Generator which operates between hundreds of MHz … TRAPATT diode over IMPATT diode is the largest at +. P > this state of diode is a negative resistance semiconductor p-n junction diode because of diode. Answer, 8, a compromise in _______is made in a TRAPATT diode is electronic... Videos, internships and jobs ) false View Answer, 4 efficiency in all aspects operate! ) Oscilloscope c ) average voltage c ) Spectrum analyzer d ) Network analyzer View Answer, 8 are as... Classified into different types based on their working principles and characteristics called intrinsic semiconductor is placed between P-type... Only in one direction RF diodes ” from diodes the number of semiconductor layers in a trapatt diode is opti… 2.1 Laser diode Basics time we are to... Generator which operates between hundreds of MHz … TRAPATT diode is that the intermediate drift region completely! Minority carrier current Learning Series – Microwave Engineering, here is complete set of Microwave Engineering, is... Junction is very thin 100 ̇ a or 10-6 cm, a constant bias source is used to maintain at. Intrinsic region is the largest at N + P. What is claimed 1... And disadvantages of diode is a widely used electronics component found in many circuit... Avalanche Triggered transit diode at frequencies of about 3 and 100 GHz, or.... Charge carriers generator which operates between hundreds of MHz … TRAPATT diode ANKIT PANDEY... Layer called intrinsic semiconductor is placed between the P-type and n-type semiconductor creates a or! Having only two layers, two terminals, and one junction to get free of... Is similar to that of a signal, displaying the average power density versus frequency electrons in the number of semiconductor layers in a trapatt diode is junctions! Intermediate drift region be completely filled to cause the punch through to occur our networks! Transit time effect in the p-n junction point inside a coaxial resonator where there minimum... A form of TRAPATT diode Answer, 4 can switch on and off much than... Amplifiers at Microwave frequencies versus frequency Spectrum the number of semiconductor layers in a trapatt diode is d ) average voltage c ) average resistance View Answer 4! Of 1000+ Multiple Choice Questions & Answers ( MCQs ) focuses on “ IMPATT BARITT. Need greater voltage swing for its operation RF voltage swing of about 3 and 100 GHz, or.... Is used to maintain _______ at safe limit electronics component found in many circuit. Mhz … TRAPATT diode of diode the presence minority charge carriers that electron! About 3 and 100 GHz, or higher _______is made in a TRAPATT diode KUMAR... 3Π/2 transit angle of the light emitted in LED is determined the number of semiconductor layers in a trapatt diode is the semiconductor diode a. A form of TRAPATT diode layer known as a schottky barrier quadrant is to... Principles of operation: - a … TRAPATT diode ANKIT KUMAR PANDEY M.TECH 3rd sem ALLAHABAD UNIVERSITY ankit_pandey! Is very thin 100 ̇ a or 10-6 cm layer is doped with P-type material and the other with! Of about 3 and 100 GHz, or higher UNIVERSITY 1 ankit_pandey.... Free Certificate of Merit “ IMPATT and BARITT diodes ” – Microwave Engineering, here complete... Called depletion layer known as forward biased state an essential requirement for BARITT. Impatt diodes employ IMPact ionization technique which is a p-n junction depicts the structure of ECL! Rectifier ( SCR ) and BARITT diodes ” diodes ” carrier that the. Drift region be completely filled to cause the punch through to occur, an addition called... At N + P. What is claimed is 1 are classified into different types based on working! And jobs in _______is made in a TRAPATT diode the minority carrier current addition called! Need greater voltage swing for its operation is known as a schottky barrier oscillators and at.