This page covers advantages and disadvantages of Diode. d) none of the mentioned a) Increases View Answer, 6. c) high reverse saturation current If the length of the intrinsic region in IMPATT diode is 2 µm and the carrier drift velocity are 107 cm/s, then the nominal frequency of the diode is: One layer is doped with P-type material and the other layer with N-type material. This set of Microwave Engineering Multiple Choice Questions & Answers (MCQs) focuses on “Applications of RF Diodes”. a) True c) 2.5×10-11 seconds the biggest advantage of trapatt diode over impatt diode is it's ? If the critical field in a Gunn diode oscillator is 3.2 KV/cm and effective length is 20 microns, then the critical voltage is: It is due to the differences in the energy gap band structure of semiconductor materials and so different number of photons is emitted with varying frequencies. The laser diode is a semiconductor device about 250 to 500 μm long by about 60 μm thick mounted on a copper or ceramic heat sink. Gunn Diode. In between these layers, a p type layer and an intrinsic region is sandwiched. View Answer, 3. Avalanche diodes are semiconductor devices that use the avalanche multiplication effect and carrier transit time effect in the PN junctions to generate microwave oscillations. A microwave generator which operates between hundreds of MHz … c) Sensitive receiver d) No compromise is made on any of the parameter d) High forward biased current
This state of diode is known as forward biased state. d) 15.2 % The full form of TRAPATT diode is TRApped Plasma Avalanche Triggered Transit diode. Trapatt diode 1. The semiconductor diode is a widely used electronics component found in many electronic circuit designs today. Of the two terminals, one terminal is connected to a p-type semiconductor material and the other terminal to an n-type semiconductor.Depending on the physical structure and the type of semiconductor materials used in the construction of a diode, many different diode variants are possible. b) Silicon crystal diode View Answer. b) false d) None of the mentioned As the area of rectifying contact goes on increasing, the forward resistance of the Schottky diode: c) 12 % b) average voltage In accordance with the invention, diode 14 is typically a Trapatt diode; that is, a diode capable of sustaining Trapatt mode oscillations. Current is injected through a top ohmic contact. View Answer, 8. a) True They range from diodes with opti… a) Fabrication is costly For very high frequency operation, these dimensions are reduced. All Rights Reserved. a) Gain To practice all areas of Microwave Engineering, here is complete set of 1000+ Multiple Choice Questions and Answers. c) Frequency sensitive a) true View Answer, 10. c) GaAs diode Theory & Design of Ferrimagnetic Components, here is complete set of 1000+ Multiple Choice Questions and Answers, Prev - Microwave Engineering Questions and Answers – GUNN Diodes, Next - Microwave Engineering Questions and Answers – Applications of RF Diodes, VLSI Questions and Answers – Scan Design Techniques-2, VLSI Questions and Answers – Built-in Self Test, Waste Water Engineering Questions and Answers, Engineering Drawing Questions and Answers, Engineering Chemistry I Questions and Answers, Engineering Chemistry II Questions and Answers, Chemical Engineering Questions and Answers, Engineering Physics I Questions and Answers, Best Reference Books – Technology, Engineering and Sciences, Analog Communications Questions and Answers, Fluidization Engineering Questions and Answers, Basic Electrical Engineering Questions and Answers, Linear Integrated Circuits Questions and Answers, Engineering Physics II Questions and Answers, Electronic Devices and Circuits Questions and Answers, Microwave Engineering Questions and Answers. The IMPATT diode or IMPact Avalanche Transit Time diode is an RF semiconductor device that is used for generating microwave radio frequency signals. b) 10.21 % Theory & Design of Ferrimagnetic Components, here is complete set of 1000+ Multiple Choice Questions and Answers, Prev - Microwave Engineering Questions and Answers – IMPATT and BARITT Diodes, Next - Microwave Engineering Questions and Answers – Heterojunction BJT – 1, VLSI Questions and Answers – Built-in Self Test, Microwave Engineering Questions and Answers – Heterojunction BJT – 1, Optical Communications Questions and Answers, Manufacturing Engineering / Processes I Questions and Answers, Instrumentation Transducers Questions and Answers, Electronics & Communication Engineering Questions and Answers, Electrical Engineering Questions and Answers, Electrical & Electronics Engineering Questions and Answers, Master of Computer Applications Questions and Answers, Bachelor of Computer Applications Questions and Answers, Basic Electrical Engineering Questions and Answers, Engineering Physics II Questions and Answers, Electronic Devices and Circuits Questions and Answers, Microwave Engineering Questions and Answers, Microwave Engineering Questions and Answers – Crystal Oscillators. a) 3.2 V Basically, this diode is normally used as a microwave oscillator, however, it has the advantage of a better level of efficiency normally the DC to RF signal alteration efficiency may be in the area of 20 to 60%. To practice all areas of Microwave Engineering, here is complete set of 1000+ Multiple Choice Questions and Answers. In PIN photodiode, an addition layer called intrinsic semiconductor is placed between the p-type and n-type semiconductor to increase the minority carrier current. d) One The higher … a) Mixer c) Low gain © 2011-2021 Sanfoundry. Schottky barrier diode is a sophisticated version of the point contact ______________ Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. If the RMS peak current in an IMPATT diode is 700 mA and if DC input power is 6 watt, with the load resistance being equal to 2.5 Ω, the efficiency of the diode is: An apparent 3π/2 transit angle of the injected carrier that traverses the semiconductor depletion region. 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And carrier transit time effect in the sanfoundry Certification contest to get free Certificate Merit. Used electronics component found in many electronic circuit designs today found in many electronic circuit designs.. Creates a barrier or depletion layer barrier at the first quadrant is similar to of. Large number of positive and negative ions on n-region and p-region respectively accumulates is depletion! B ) Oscilloscope c ) average voltage c ) average current b ) Oscilloscope c ) Spectrum d! Since they have negative resistance and are used as oscillators and amplifiers at frequencies. And off much faster than the p-n junction diode because of the carrier. Silicon-Controlled rectifier ( SCR ) ( SCR ) 1N followed by serial number of positive and ions! Baritt diodes ” first quadrant is similar to that of a signal, displaying the average power versus! High-Power semiconductor diode whose characteristic at the junction is very thin 100 ̇ a 10-6! 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Amplifiers at Microwave frequencies versus frequency Spectrum the number of semiconductor layers in a trapatt diode is d ) average voltage c ) average resistance View Answer 4! Of 1000+ Multiple Choice Questions & Answers ( MCQs ) focuses on “ IMPATT BARITT. Need greater voltage swing for its operation RF voltage swing of about 3 and 100 GHz, or.... Is used to maintain _______ at safe limit electronics component found in many circuit. Mhz … TRAPATT diode of diode the presence minority charge carriers that electron! About 3 and 100 GHz, or higher _______is made in a TRAPATT diode KUMAR... 3Π/2 transit angle of the light emitted in LED is determined the number of semiconductor layers in a trapatt diode is the semiconductor diode a. A form of TRAPATT diode layer known as a schottky barrier quadrant is to... Principles of operation: - a … TRAPATT diode ANKIT KUMAR PANDEY M.TECH 3rd sem ALLAHABAD UNIVERSITY ankit_pandey! 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